Semiconductor memory with sensing stability

摘要

A memory having a read function for generating a plurality of data bits on a single output pin includes a control circuit, a sense amplifier circuit, and a decoder. The control circuit generates a decoder control pulse responding to the control pulse generated from an address transition detector receiving a first address. The sense amplifier circuit senses data bits from a memory array of the memory and is coupled to the output pin through a data output buffer. The decoder receives a second address and provides decoding signals to the sense amplifier circuitry in response to the control pulse generated from the control circuit. The read-out operation according to the invention is performed sufficiently and stably even when a propagation skew occurs between the first address and the second address.