发明名称 |
Structure of a photo sensor |
摘要 |
An improved structure of a photo sensor is disclosed. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of conventional PIN photo diode, and enhance the sensitivity of photo sensing.
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申请公布号 |
US5920091(A) |
申请公布日期 |
1999.07.06 |
申请号 |
US19980015448 |
申请日期 |
1998.01.29 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
LIN, CHIH HUNG |
分类号 |
H01L27/144;H01L31/105;(IPC1-7):H01L29/04 |
主分类号 |
H01L27/144 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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