发明名称 Structure of a photo sensor
摘要 An improved structure of a photo sensor is disclosed. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of conventional PIN photo diode, and enhance the sensitivity of photo sensing.
申请公布号 US5920091(A) 申请公布日期 1999.07.06
申请号 US19980015448 申请日期 1998.01.29
申请人 UNITED MICROELECTRONICS CORPORATION 发明人 LIN, CHIH HUNG
分类号 H01L27/144;H01L31/105;(IPC1-7):H01L29/04 主分类号 H01L27/144
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