| 发明名称 |
Reducing reverse short-channel effect with light dose of P with high dose of as in n-channel LDD |
| 摘要 |
Submicron nLDD CMOS logic devices with improved current drive and reduced reverse short-channel effects having heavily doped As and lightly doped P nLDD region.
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| 申请公布号 |
US5920104(A) |
申请公布日期 |
1999.07.06 |
| 申请号 |
US19970922504 |
申请日期 |
1997.09.03 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NAYAK, DEEPAK KUMAR;HEILER, FELICIA;RAKKHIT, RAJAT |
| 分类号 |
H01L21/336;H01L29/78;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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