| 发明名称 |
Electromigration resistant metallization process microcircuit interconnections with RF-reactively sputtered titanium tungsten and gold |
| 摘要 |
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 mu m, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.
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| 申请公布号 |
US5920794(A) |
申请公布日期 |
1999.07.06 |
| 申请号 |
US19960761817 |
申请日期 |
1996.12.06 |
| 申请人 |
TELEFONAKTIEBOLAGET LM ERICSSON |
发明人 |
HONG, SAM-HYO |
| 分类号 |
H01L21/28;H01L21/285;H01L21/768;H01L23/48;H01L23/485;H01L23/52;H01L23/532;H01L29/40;(IPC1-7):H01L21/283 |
主分类号 |
H01L21/28 |
| 代理机构 |
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