发明名称 FORMATION OF THIN FILM UTILIZING DISCHARGE PLASMA
摘要 PROBLEM TO BE SOLVED: To efficiently form metal-contg. thin film by applying the electric field on the space with counter electrode under nearly atmospheric pressure in a gas atmosphere contg. a metallic compd. so as to regulate the discharge current density to a specified range and generating plasma. SOLUTION: Under nearly atmospheric pressure in a gas atmosphere contg. a metallic compd., the discharge current density between the electrodesis regulated to the range of 0.2 to 300 mA/cm<2> , by which the metallic compd. is plasma- excited, and the plasma is retained to a glow discharge state to enable the formation of metallic element-contg. thin film. For realizing this formation, it is preferable that the pulsificated electric field is applied on the space between the electrodes. It is preferable that the raising of the pulse voltage to be applied on the space between the electrodes is regulated to <=100μs, the intensity of the pulse electric field is regulated to 1 to 100 kV/cm, the frequency of the electric field is regulated to 0.5 to 100 kHz, and the pulse continuation time is regulated to 1 to 1,000μs. Moreover, as the metallic compd., metallic alkoxide is most preferable used.
申请公布号 JPH11181573(A) 申请公布日期 1999.07.06
申请号 JP19980106387 申请日期 1998.04.16
申请人 SEKISUI CHEM CO LTD 发明人 YARA TAKUYA;YUASA MOTOKAZU;SHINJO TAKASHI;NISHIGUCHI NAOKI;HINO MAMORU
分类号 H05H1/46;C08J7/00;C23C16/40;C23C16/42;C23C16/50;C23C16/505;C23C16/515;(IPC1-7):C23C16/50 主分类号 H05H1/46
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