Method for accelerated test of semiconductor devices

摘要

A method for an accelerated test of semiconductor devices comprises the steps of determining a relational expression t1=t2m between an information holding lifetime t1 at a temperature T1 and another lifetime t2 at another temperature T2, expressing the exponent m as a function of the temperature that is proportional to the Boltzmann's factor, and calculating the information holding lifetime t2 at the temperature T2 on the basis of the information holding lifetime t1 at the temperature T1 using the relational expression.