发明名称 |
High density plasma enhanced chemical vapor deposition process in combination with chemical mechanical polishing process for preparation and planarization of intemetal dielectric layers |
摘要 |
A wafer planarization process which utilizes combined high density plasma chemical vapor deposition (HDP-CVD) process and chemical mechanical polishing (CMP) process is disclosed. This process includes the steps of (a) forming a first HDP-CVD layer on the surface of a semiconductor wafer using a first HDP-CVD composition having a higher etching/depositing component ratio and thus a lower CMP removal rate; (b) forming a second HDP-CVD layer on the first HDP-CVD layer using the same HDP-CVD process but with a second HDP-CVD composition having a lower etching/depositing component ratio and thus a higher CMP removal rate; and (c) using a chemical mechanical process to remove at least a part of the second HDP-CVD layer using the first HDP-CVD layer as a stopper. A protective layer with the same etching/deposition components but a different ratio than the sacrificial layer can be deposited on the sacrificial layer to minimize the dishing effect during the initial stage of the chemical mechanical polishing process.
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申请公布号 |
US5920792(A) |
申请公布日期 |
1999.07.06 |
申请号 |
US19980045101 |
申请日期 |
1998.03.19 |
申请人 |
WINBOND ELECTRONICS CORP |
发明人 |
LIN, CHI-FA |
分类号 |
H01L21/3105;H01L21/316;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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