Semiconductor memory device and method of manufacturing the same

摘要

A semiconductor memory device including a semiconductor substrate having a trench; a dielectric film formed on the substrate; a storage node electrode formed on the dielectric film; a first insulating film formed on the storage node electrode corresponding to the trench; a gate electrode formed on the first insulating film; a second insulating film formed on the gate electrode; a gate insulating film formed on at least one the side of gate electrode; a semiconductor layer formed on the at least one side of the first and second insulating films; and impurity regions formed in the semiconductor layer at the sides of the first and second insulating films. A manufacturing method including the steps of etching a semiconductor substrate to form a trench; forming a dielectric film and a conductive layer on the substrate; forming a first insulating film, a gate electrode, a second insulating film, and an interconnection layer, on the conductive layer corresponding to the trench; forming a semiconductor layer on the sides of the first and second insulating films; etching the conductive layer to form a storage node; and forming an impurity region in the semiconductor layer at the sides of the first and second insulating films.