| 发明名称 |
Vertical MISFET devices |
| 摘要 |
The present invention relates to Silicon Germanium-based Vertical MISFET devices allowing smaller device size and exhibiting significant advantages over prior devices related to the reduction of drain induced barrier lowering and parasitic capacitance and permitting a higher integration density.
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| 申请公布号 |
US5920088(A) |
申请公布日期 |
1999.07.06 |
| 申请号 |
US19960664765 |
申请日期 |
1996.06.17 |
| 申请人 |
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM (IMEC VZW) |
发明人 |
AUGUSTO, CARLOS JORGE RAMIRO PROENCA |
| 分类号 |
H01L21/8238;H01L27/092;H01L29/165;H01L29/45;H01L29/78;H01L29/786;(IPC1-7):H01L31/032;H01L31/033;H01L29/76 |
主分类号 |
H01L21/8238 |
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