Continuously film-forming apparatus provided with improved gas gate means

摘要

A continuous film-forming apparatus includes a plurality of reaction chambers each capable of forming a semiconductor film with a different chemical composition. The reaction chambers are arranged such that a substrate web on which a film is to be formed can be hermetically moved through each of the reaction chambers under a vacuum condition. A gas gate is disposed at a central position between each pair of adjacent reaction chambers, with each gas gate provided with a slit for communication between the adjacent reaction chambers. The slit is provided with a clearance which allows the substrate web to move therethrough, is structured such that gate gas can be introduced therein from above and beneath the substrate which is moved through the clearance, and is dimensioned such that opposite sides proximate to the position where the gate gas is introduced have different heights in accordance with the inner pressure upon film formation of each of the adjacent reaction chambers in communication with each other by the slit.