发明名称 Target material of metal silicide
摘要 A novel metal silicide target material is provided which can effectively restrict the occurrence of fine particles. The target material has a structure comprising metal silicide and free silicon, which material has a relative density more than 100% which relative density is defined by a ratio of a true density of the target material to a theoretical density obtained by calculation, and free silicon portions in the structure of the target material which free silicon portions are provided with Vickers hardness less than 1,100 or which free silicon portions are provided with dislocation-undetectable areas each having a diameter not less than 1 mu m. Further, it is desirable that a rupture load evaluated by acoustic emission at which rupture load there occurs rupture in a scratching test of the surface of target material by acoustic emission is not less than 50N.
申请公布号 US5919321(A) 申请公布日期 1999.07.06
申请号 US19970872142 申请日期 1997.06.10
申请人 HITACHI METALS, LTD. 发明人 HIRAKAWA, EIJI
分类号 C23C14/34;(IPC1-7):C22C27/04;C22C22/06 主分类号 C23C14/34
代理机构 代理人
主权项
地址