发明名称 Vacuum microelectronic device and methodology for fabricating same
摘要 A vacuum state microelectronic device comprising at least a cathode, an anode, and a grid, disposed in a cavity, and formed by the wafer bonding of two planar substrates. The technology permits multiple vacuum state microelectronic devices (vacuum tubes) to be arrayed on a single substrate in an integrated manner.
申请公布号 US5919070(A) 申请公布日期 1999.07.06
申请号 US19960698643 申请日期 1996.08.16
申请人 PHILIPS ELECTRONICS NORTH AMERICA CORPORATION 发明人 KHAN, BABAR A.;CAMMACK, DAVID A.;PINKER, RONALD
分类号 H01J9/24;G02F1/13357;H01J9/00;H01J9/02;H01J9/14;H01J9/26;H01J9/28;H01J17/49;H01J19/02;H01J19/38;H01J19/54;H01J19/58;H01J19/62;H01J19/66;H01J21/10;H01J21/36;H01J61/00;H01J61/30;H01J61/82;H01J65/00;H01L21/02;H01S3/03;H01S3/097;H01S3/0973;(IPC1-7):H01J9/02 主分类号 H01J9/24
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