| 摘要 |
PROBLEM TO BE SOLVED: To form an emission center of pure blue by forming a specified n-type gallium nitride based compound semiconductor layer on a substrate and then introducing a material gas, mixed with gaseous organic magnesium compound, into a reaction tube thereby forming a specified i-type gallium nitride based compound semiconductor added with Mg as insulation and emission layers. SOLUTION: Single crystal of an n-type gallium nitride based compound semiconductor Ga1-x Alx N (1>x>0) is grown on a sapphire substrate 3. A material gas is then mixed with Mg component in the form of organic magnesium compound, e.g. CP2 Mg, in order to form a gallium nitride based compound semiconductor Ga1-x Alx N (1>x>0) mixed with Mg component. The quantity of Mg to be added to a solid is controlled by means of changeover mixing valves 32-34 for controlling the flow rate ratio of Mg and Ga to regulate the supply of Ma material gas. When an appropriate quantity (2×10<20> cm<-3> ) of Mg is added, pure blue emission can be attained clearly and the center of pure blue emission can be formed. |
