| 摘要 |
Infrared solid-state imaging elements of the present invention include an infrared absorbing section that is formed as to correspond to each pixel aligned in a two-dimensional pattern for absorbing incident infrared radiation and converting the same into heat, a temperature detector section that is formed as to correspond to each pixel on a semiconductor substrate and are arranged of a plurality of serially connected silicon pn junction diodes that are biased in a forward direction, a hollow section formed on each region on which the temperature detector section is formed on the semiconductor substrate, supporting mechanisms that are arranged of materials exhibiting large thermal resistance and which support the temperature detector portion above the hollow section on the semiconductor substrate, and a joint column for thermally coupling the infrared absorbing section and the temperature detector section. <IMAGE> |
