| 摘要 |
A projection alignment apparatus in which a rectangular illumination region (21R) on a reticle (R) is illuminated with exposure light from an exposure light source (1), and while a pattern in the illuminated region (21R) is projected through a projection optical system (PL) onto a rectangular exposure region (21W) on a wafer (W), the reticle (R) and the wafer (W) are synchronously scanned relative to the projection optical system (PL) to transfer the pattern image of the reticle (R) onto a shot region on the wafer (W). The projection magnification of the projection optical system (PL) is set within a range of 1/5 to 1/10, and a reticle is used which is larger than, for instance, a 6 inch square (approximately 152 mm square). <IMAGE> |
