| 摘要 |
PROBLEM TO BE SOLVED: To improve flatness of edges of a cavity, by correctly making the edges surface a or m of gallium nitride compound semiconductor. SOLUTION: A semiconductor laser is composed of gallium nitride base compound semiconductor layers on a sapphire substrate. When cavity edges are formed, the edges are oriented in directions L1 and L2 which are inclined by a specified offset angle θ from a main axis F (c axis) of sapphire crystal which indicates the direction of the edges. In this way, the edges become correctly surface a or surface m of the gallium nitride base compound semiconductor crystal. |
