| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with which high performance and high reliability of a wiring layer or the like can be realized by using a simple manufacturing process, and a manufacturing method of the semiconductor integrated circuit device. SOLUTION: In this circuit device, dummy wiring layers 15b-15e identical to an intermediate wiring layer 15a are arranged on the periphery of the intermediate wiring layer 15a of a penetrating through-hole 13. For example, the intermediate wiring layer 15a and the dummy wiring layers 15b-15e are arranged on an intersection 16a regions of wiring pitch lines 16 of the wiring layers 15f-15i of the same layers. |
