| 摘要 |
PROBLEM TO BE SOLVED: To further increase the degree of integration of a semiconductor device, such as the DRAM, etc., having large steps between memory cell sections and their peripheral circuit sections by sufficiently flattening the steps by a simple method. SOLUTION: In a method for manufacturing a semiconductor device, the surface portion of an interlayer insulating film 13 which covers a field shield 22 or a gate electrode structure 23 through an interlayer insulating film 12 composed of a silicon oxide film and is composed of a BPSG(boro-phospho- silicate glass) film is removed by about 100-200 nm in thickness by the chemical mechanical polishing(CMP) method. When the surface portion of the film 13 is polished, the surface is flattened to a some degree. Then the film 13 is etched back by using the highest part of the insulating film 12 as a stopper. When the film 13 is etched back, the film 13 is sufficiently flattened. |
