| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having such a structure that can prevent intrusion of hydrogen into a capacitor insulating film having a high dielectric constant. SOLUTION: A periphery of a capacitor provided with a lower electrode 9, an upper electrode 12, and a dielectric film 13 (tantalum oxide film) is covered with silicon nitride films 6 and 14. Since intrusion of hydrogen into the dielectric film 13 can be prevented in a hydrogen sintering process by means of the silicon nitride films 6 and 14, deterioration of the dielectric constant of the capacitor composed of a high dielectric or ferroelectric film can be suppressed. |
