| 摘要 |
PROBLEM TO BE SOLVED: To provide a film for diffusion which has little difference in the impurity concn. at both sides and can be easily peeled off from a wafer after the diffusion treatment and manufacture thereof. SOLUTION: This film contains a SiC powder 1 as a base, impurity compds. and org. binder 2. This powder is composed of a first and second powders 1a, 1b having their respective grain size distributions close to logarithmic normal distributions but not overlapping mutually and grain sizes arranged, so that the difference between the 16% and 84%-cumulative values is 20 μm or less. The SiC powder 1, impurity compds., org. binder 2 and org. solvent are mixed and coated on a plastic sheet, etc., to form a film, the film is dried to form a final film, which is then held closely between wafers like a stack to conduct a stable and efficient diffusion treatment. |
