WRITING CIRCUIT OF NON-VOLATILE MEMORY AND NON-VOLATILE MEMORY

摘要

PROBLEM TO BE SOLVED: To provide the writing circuit of a non-volatile memory that can quickly and reliably execute writing data to a large-capacity memory. SOLUTION: A writing circuit divides writing data Indata 0-7 of 16 addresses Rad-0-Rad-F into 0-F addresses, 8 bits in parallel, and allows a D flip flop 3 to retain the data. On the other hand, eight D flip flops 1 simultaneously retain 8 bits of verification data Outdata 0-7 of a non-volatile memory. Then, in the case of verification, 16 address attributes (Rad 0-F) are given to each of the 8-bit parallel writing data, thus comparing 8×16 writing data being retained by 8×16 D flip flops 3 with 8 verification data being retained by 8 D flip flops 1 in the address order of the 16 address attributes and at the same time 8 in parallel.