| 摘要 |
PROBLEM TO BE SOLVED: To shorten the hydrogenation process of a thin film transistor. SOLUTION: A low resistance silicon gate electrode is exposed by providing an opening at a gate electrode, and hydrogenation is operated so that a hydrogenation time can be shortened. At the time of the hydrogenation process, an opening is provided at a gate wiring electrode on an active area, and a part for exposing a low resistance silicon gate electrode is formed so that hydrogenation can be operated. Therefore, a hydrogen diffusion path is largely divided into a diffusion path 14 and a diffusion path 24. In the diffusion path 14, the distance from the edge of a low resistance silicon gate electrode 5 to the center of an active area 13 is made long, and hydrogen concentration is made lower according as it goes toward the central part of the active area 13, and the shortage of hydrogenation is generated. On the other hand, in the diffusion path 24, hydrogen radical or the like is dispersed from a part just above the active area through the two layer films of low resistance silicon gate electrode 5/gate insulating film 4 which is almost 0.1μm so that the shortage of hydrogen at the central part of the active area can be prevented. As a result, the hydrogenation time can be shortened compared with the conventional hydrogenation.
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