| 摘要 |
PROBLEM TO BE SOLVED: To enable growth in the vapor phase of a III-V compd. semiconductor film, having a low carrier concn, suited as a buffer layer by doping oxygen in the semiconductor film which has been extremely difficult in prior art, instead by controlling the carrier concn. at V/III ratio. SOLUTION: Group III and V raw materials gases and raw material contg. a doping element are fed in a reactor tube to have a III-V compd. semiconductor film grown epitaxially on a substrate. The material contg. the doping element uses water vapor. Thus oxygen is doped in the semiconductor film, without reacting with hydrogen, thereby lowering the carrier concn, in the grown film to 1×10<16> cm<-3> or less.
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