发明名称 MANUFACTURE OF NITRIDE SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method by which a nitride semiconductor element having highly smooth split faces can be manufactured at a high yield. SOLUTION: In a method for manufacturing nitride semiconductor element nitride semiconductor elements are manufactured by splitting a semiconductor wafer 100 which is composed of a substrate 101 and nitride semiconductors 102 formed on the substrate 102 and has first and second main surfaces into pieces. The process particularly includes a step of forming groove section 103 into the substrate 101 from the first and/or second main surface side, a step of forming break lines 104 in the groove sections 103 with a laser beam, and a process of splitting the semiconductor wafer 100 into pieces along the break lines 104.
申请公布号 JPH11177137(A) 申请公布日期 1999.07.02
申请号 JP19970345937 申请日期 1997.12.16
申请人 NICHIA CHEM IND LTD 发明人 SHONO HIROBUMI;TOYODA TATSUNORI
分类号 H01L21/301;H01L33/06;H01L33/32 主分类号 H01L21/301
代理机构 代理人
主权项
地址