发明名称 |
MANUFACTURE OF NITRIDE SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which a nitride semiconductor element having highly smooth split faces can be manufactured at a high yield. SOLUTION: In a method for manufacturing nitride semiconductor element nitride semiconductor elements are manufactured by splitting a semiconductor wafer 100 which is composed of a substrate 101 and nitride semiconductors 102 formed on the substrate 102 and has first and second main surfaces into pieces. The process particularly includes a step of forming groove section 103 into the substrate 101 from the first and/or second main surface side, a step of forming break lines 104 in the groove sections 103 with a laser beam, and a process of splitting the semiconductor wafer 100 into pieces along the break lines 104. |
申请公布号 |
JPH11177137(A) |
申请公布日期 |
1999.07.02 |
申请号 |
JP19970345937 |
申请日期 |
1997.12.16 |
申请人 |
NICHIA CHEM IND LTD |
发明人 |
SHONO HIROBUMI;TOYODA TATSUNORI |
分类号 |
H01L21/301;H01L33/06;H01L33/32 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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