| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electrostatic chuck device, which is enhanced in electrostatic force by decreasing the insulating dielectric layer of an electrostatic chuck part in volume resistivity, restrained from deteriorating in release performance when a voltage is stopped from being supplied, prevented from contaminating a semiconductor device with impurities, provided with an insulating dielectric layer free from fine cracks or pores, and satisfactory in withstand voltage characteristic. SOLUTION: In an electrostatic chuck device, a voltage is applied to a conductor electrode 1 coated with an insulating dielectric layer 2 to enable the insulating dielectric layer 2 to electrostatically chuck a specimen, wherein the main component of the insulating dielectric layer 2 is a sintered body, which is formed in a manner where 2.5 to 5 wt.% TiO2 and 5 wt.% or less TiN powder are added to high-resistance ceramic powder the volume resistivity of which is higher than 1×10<14>Ω.cm, the mixture is kneaded, molded, and baked into a sintered body the volume resistivity of which is set at 1×10<8> to 8×10<13>Ω.cm.</p> |
