HIGH-SPEED SEMICONDUCTOR MEMORY DEVICE WITH DIRECT ACCESS MODE TEST CONTROL CIRCUIT AND ITS TEST METHOD

摘要

PROBLEM TO BE SOLVED: To provide a high-speed semiconductor memory device that can read data from a memory core using a column address strobe signal without using another clock signal on a direct access mode test. SOLUTION: A semiconductor memory device has a memory core 401 containing a memory cell array and a peripheral circuit, and a control part 403 for reading data RWD (7:0) from the memory core by continuously driving a column address strobe signal TestCASB being applied from outside, thus eliminating the need for another clock pin for applying a clock signal, and hence increasing the number of semiconductor memory devices to be tested simultaneously.