| 摘要 |
PROBLEM TO BE SOLVED: To selectively and stably perform etching, by covering a plurality of conductive connection members and a plurality of second wiring layers, forming a third insulation film on a first insulation film, penetrating the film, and connecting a plurality of conductive members to a plurality of members via a plurality of fourth connection holes. SOLUTION: An SiN film 30 is deposited on the entire surface of a substrate where a silicon film 28 is formed. The SiN film 30 functions as an etch stopper of a self-aligned contact SAC in a later process. Then, a BPSG film 31 is formed on the SiN film 30, a resist pattern is formed on it, anisotropic etching is performed for forming a connection hole 32 through the BPSG film 31 and the SiN film 30, and the surface of the conductive connection member 28 is exposed. Then, an amorphous silicon film 35 is deposited on the entire surface of the substrate, a resist is filled into the space in the connection hole 32, and a silicon accumulation electrode 35 is subjected to patterning onto each conductive connection member 28. The SiN film 30 plays a role of an etch stopper. |
