| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polysilicon etching method and its etching equipment with which isotropic etching can be made without generating a plasma. SOLUTION: This polysilicon etching method contains a process loading a wafer where a polysilicon film is formed on a specified film in a process chamber 18, a process for adjusting the conditions of the pressure and temperature of the process chamber 18 in setting ranges, and a process for etching the polysilicon film by supplying an etching gas composed of halogen compounds in the process chamber 18. Consequently, the polysilicon film can be easily etched by using etching gas such as halogen compound gas and NF3 gas the bond energies of which are low.</p> |
