| 摘要 |
PROBLEM TO BE SOLVED: To prevent attachment of a reactive product to a wafer introducing section and a gate valve in a chamber, in dry etching equipment. SOLUTION: A wafer stage 4 is provided with a shutter 13, which moves synchronously with the vertical movement of the wafer stage 4. While the wafer is etched, the shutter 13 is raised and shuts a wafer introducing section 11 and prevents the flow-in of reactive gas into the wafer introducing section 11 and thereby eliminates gas stagnation in the wafer introducing section 11. While the wafer is being carried in, the shutter 13 is lowered below the carried-in position together with the wafer stage 4 and thereby does not hinder the wafer carrying operation and enables suppression of the attachment of a reactive product to the wafer introducing section 11 and a gate valve 10. |
