MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent retreat of HSQ material and film thinning and deformation into a high hygroscopic film containing a large amount of water, when a resit mask is subjected to ashing. SOLUTION: After an insulating film 5 containing Si-H bonding is formed on a substrate 1, a resist mask 7 is formed on a selected region of the insulating film 5. A part of the insulating film 5 which is not covered with a resist mask 7 is etched. After a via 8 is formed in the insulating film 5, the resist mask 7 is eliminated. When the resist mask 7 is eliminated, the resist mask 7 is subjected to ashing by using a steam plasma plasma 9 or plasma formed of mixed gas of hydrogen and oxygen.