| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size and the thickness of a photo-semiconductor device by plating the surface of a planar transparent resin and mounting a photo- semiconductor device on the plated part. SOLUTION: A photo-semiconductor device is provided with a substantially square planar transparent thermoplastic resin 21 and a square hole 22 is made in the center on the surface thereof. The outer side faces 21a, 21b of the transparent resin 21, the inner side wall 21c and the inner bottom face 21d of the hole 22 are then subjected to plating in stripe at a plurality of parts 23 by about 0.03 mm. A light receiving semiconductor chip 24 having a light receiving face 24a, a photodiode or a photo IC, is mounted at the plated part 23 on the inner bottom face 21d of the hole 22. Subsequently, the electrode pad 24aa of the light receiving semiconductor chip 24 and the plated part 23 are connected electrically by bump bonding. Furthermore, the chip 24 is bonded by sealing the hoe 22 thereof with epoxy resin 25. According to the structure, the photo- semiconductor device can be reduced in size and thickness. |
