| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor memory device in which the performance of a memory cell can be enhanced by a method wherein a column selection line is arranged in a row direction and a data input/output line is arranged in a column direction. SOLUTION: A memory cell bank which is arranged at the upper part is provided with two memory cell arrays 307- 1, 307- 2. A memory cell bank which is arranged at the lower part is provided with two memory cell arrays 307- 31, 307- 32. The respective memory cell banks are provided, respectively with sense amplifiers 309 and with column switches 311. By row address signal groups RA0 to RAn-1 , rows of row memory cell banks and those of memory cells are selected, and corresponding word lines are activated. The column switches 311 are turned on according to an activated column selection line CSL, and a bit line is connected electrically to a data input/output line 10. Data is transmitted to the sense amplifiers 309 via the word lines so as to be amplified, and the data is transmitted to an external pad through the data input/output line 10 and an input/output interface 313. |
