| 摘要 |
PROBLEM TO BE SOLVED: To suppress reduction in a signal voltage margin and to improve reliability for a storage element of a ferromagnetic body memory, by making thin either a bit line width or a plate line width or both of them at a part where a bit line crosses a plate line, and reducing an area where the bit line overlaps with the plate line. SOLUTION: A line width of a bit line and a plate line is made thin at a region where a bit line crosses a plate line. More specifically, a 4 μm plate line width is set to 1 μm width and a 2 μm bit line width is set to 1 μm only at a part where the bit line crosses the plate line, thus setting the area of the overlapped part to 1 μm<2> , hence reducing the coupling capacitance between the bit line and the plate line, at the same time effectively suppressing reduction in a signal voltage margin being obtained from a memory cell due to the coupling capacitance, reducing malfunction when reading data from the memory, and improving reliability of a storage element. |
