| 摘要 |
PROBLEM TO BE SOLVED: To reduce the film thickness of an interlayer insulation film to be laminated, by reducing the film thickness of a third insulation film on a second region as compared with that of a third insulation film on a first region, and reducing the third insulation film surface on the first region as compared with the third insulation film surface on the second region. SOLUTION: A BPSG film 12 is formed relatively thinly on the upper surface of a capacitor 10 at a cell part and relatively thickly at a peripheral circuit part. An absolute difference C is generated at a boundary part X between the peripheral circuit part and a cell part. In this kind of a semiconductor device, a film thickness of the BPSG film 12 at the peripheral circuit part is fully reduced without increasing the absolute difference C being generated at the boundary part X, thus reducing the aspect ratio of a contact hole, machining the contact hole easily, and improving burial characteristics when simultaneously burying a contact in a wire formation process. |
