| 摘要 |
PROBLEM TO BE SOLVED: To form a cell plate contact of a stacked cell of a bulk DRAM with high controllability by etching without increasing the cost. SOLUTION: A DRAM semiconductor storage device is provided with a memory cell capacitor composed of a stacked storage electrode 11 and a plate electrode 13, metal wiring 17, an interlayer film 14 between the plate electrode 13 and the metal wiring 17, and a contact 15 which connects the plate electrode 13 to the metal wiring 17. The contact 15 is formed in the area between stacked storage electrode patterns 11 which are separated from each other by a distance which is shorter than the doubled sum of the thicknesses of the interlayer film 14 and the plate electrode film 13. When the interlayer film 14 is deposited, the contact 15 is completely filled up with the film 14, and the depth of the contact 15 can be made closer to that of another contact 16 due to the wide interval between the patterns 11. Therefore, the etching work which is performed for forming the contact 15 can be controlled easily. |
