| 摘要 |
PROBLEM TO BE SOLVED: To provide electrode structure of a semiconductor switch, in which generation of a switching loss or a serge voltage can be reduced by preventing generation of inductance. SOLUTION: Plural semiconductor chips 2 are directly placed on a drain electrode 3 used also as a heat radiating plate, and source electrodes 4 and 5 and a gate electrode 6 are placed on positions so that the semiconductor chip 2 can be surrounded. The source electrodes 4 and 5 and the gate electrode 6 are placed by strongly fixing resin 7 for insulation between those electrodes and the drain electrode 3 and electrically insulating them, and each electrode is connected through plural thin bonding wires 8 with the semiconductor chip 2 in parallel. The source electrode 4 is formed in a 'U' shape so that the top plate can be made wide and large, and the top plate of the 'U'-shaped source electrode and the drain electrode are arranged adjacent in parallel. Thus, currents are allowed to flow on each electrode so that inductance on each electrode can be offset by the mutual inductance effect. |
