| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor storage device in which an error can be corrected with good efficiency and precisely even when its integration degree is increased by a method wherein the number of possible pieces of discrimination numbers is made at least twice the number of possible pieces of data trains to be input, a prescribed discrimination number is allocated to every data string so as to be stored in a corresponding memory cell, it is regarded as corresponding to a first transition when it is read and the error is corrected. SOLUTION: An EEPROM is provided with a memory cell 12 in which converted data us retained and with a decoding circuit 13 which corrects an error so as to be decoded. When binary data which is composed of '0' or '1' is input, a coding circuit 11 divides the data into one bit each so as to form data composed of '0' or '1'. The data is allocated to '1' or '3' among from discrimination numbers composed of four values of '0', '1', '2' and '3' so as to be stored in one memory cell. Thereby, the input data '0' is converted into a discrimination number '1', and the input data '1' is converted into a discrimination number '3'. |
