发明名称 |
TECHNIQUES FOR ETCHING A TRANSITION METAL-CONTAINING LAYER |
摘要 |
A method for etching at least partially through a transition metal-containing layer disposed above a substrate is disclosed. The transition metal-containing layer is disposed below an etch mask. The method includes providing a plasma processing system having a plasma processing chamber, and configuring the plasma processing chamber to etch the transition metal-containing layer. The plasma processing chamber configuring process includes configuring the plasma processing chamber to receive a source gas that includes HCl and Ar, and configuring a power supply associated with the plasma processing chamber to supply energy to strike a plasma from the source gas. The plasma processing chamber configuring process further includes configuring the plasma processing chamber to etch at least partially the transition metal-containing layer with the plasma.
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申请公布号 |
WO9933086(A1) |
申请公布日期 |
1999.07.01 |
申请号 |
WO1998US26410 |
申请日期 |
1998.12.11 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
O'DONNELL, ROBERT, J.;GOLDSPRING, GREGORY, J. |
分类号 |
C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01J37/32 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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