IMPROVED TECHNIQUES FOR ETCHING AN OXIDE LAYER

摘要

A method for etching a substrate having thereon a silicon dioxide-containing layer disposed above a TiN layer is disclosed. The method includes positioning the substrate in the plasma processing chamber. There is also included flowing an etchant source gas that includes CO, CHF3, neon and N2 into the plasma processing chamber. Further, there is included forming a plasma out of the etchant source gas within the plasma processing chamber to cause etching of the silicon-dioxide-containing layer.