Method for programming power independent memory modules with cell matrix of NAND type

摘要

The programming method involves applying a forward voltage (VDurch) to word lines (WL1-WL4, WL6-WLi) which are not controlled. A voltage (VSS) lower than the above voltage is then applied only to the word line (WL4) which is next to a controlled word line (WL5) and located between that line and a reference control circuit (GSL).