| 摘要 |
<p>A method for etching at least partially through a transition metal-containing layer disposed above a substrate is disclosed. The transition metal-containing layer is disposed below an etch mask. The method includes providing a plasma processing system having a plasma processing chamber, and configuring the plasma processing chamber to etch the transition metal-containing layer. The plasma processing chamber configuring process includes configuring the plasma processing chamber to receive a source gas that includes HCl and Ar, and configuring a power supply associated with the plasma processing chamber to supply energy to strike a plasma from the source gas. The plasma processing chamber configuring process further includes configuring the plasma processing chamber to etch at least partially the transition metal-containing layer with the plasma.</p> |
