Semiconductor module with marking aperture section

摘要

A second conductive film (8b) covers the surface of the BPSG film (7b) on the first conductive film (6b). The maximum size of the aperture in the marking aperture section (5) is at least equal to twice the thickness sum of the first conductive and the BPSG films. The marking aperture section preferably consists of a single microaperture pattern, or a set of several such patterns. With the above mentioned deposition structure of the three films, the second conductive film is of cylindrical shape, surrounding the periphery of the first one and extending vertically. Independent claims specify the manufacturing process.