Semiconductor structure having contact openings with sloped side walls

摘要

Semiconductor structure having a semiconductor body with a planar surface. At least one region having an impurity therein is formed in the body and extends to the surface. A layer of insulating material is provided on the surface. Openings are formed in the layer of insulating material and expose said surface. The openings are defined by inclined side walls which extend at an angle with respect to said surface of less than 70 DEG . Contact means is carried by the surface and extends through the opening to form contact with the region. At least portions of the contact means have a slope which conforms generally to the slope of the side walls.