Semiconductor device production involves impurity implantation into a silicide layer

摘要

In a semiconductor device production process, a first silicide layer (28) on a gate electrode (24) and a first conductivity type impurity region (26) has its crystalline structure destroyed by implantation of second conductivity type impurities and is recrystallized to form a second silicide layer by annealing. A semiconductor device is produced by : (a) forming an oxide insulation layer (22) a gate insulation layer (23) and a gate electrode (24) on a semiconductor substrate (21); (b) forming gate electrode side wall spacers (25); (c) forming a first conductivity type impurity region (26) in the substrate adjacent the gate electrode (24); (d) forming a conductive layer on the substrate including the oxide insulation layer (22), the gate electrode (24) and the side wall spacers (25) and annealing the conductive layer to form a first silicide layer (28) on the gate electrode (24) and the impurity region (26); (e) removing the conductive layer from the oxide insulation layer (22) and the side wall spacers (25) and implanting second conductivity type impurities into the first silicide layer (28); and (f) forming a second silicide layer by annealing the first silicide layer (28).