| 摘要 |
A method and apparatus for reducing interconnection capacitance. A lightly doped buried layer (14) is provided in or on a substrate (8) below a field oxide region (10). The capacitance of an interconnect (2, 4a, 4b) on the field oxide is significantly reduced by the lightly doped buried layer. When using a p-type substrate, the lightly doped buried layer may, for example, be a lightly doped (10<1><3>/cm<3>) n-type region. Junction capacitance of, for example, a bipolar transistor (16) is also reduced. |
