发明名称 Method for fabricating semiconductor device
摘要 A method for fabricating a semiconductor device, in which a semiconductor chip having a first surface and a second surface substantially parallel to each other is mounted on a submount such that the first surface faces the submount, includes: a first step of applying resin to at least one of the semiconductor chip and the submount; a second step of applying a pressure to the semiconductor chip and the submount so that the semiconductor chip and the submount are bonded to each other by the resin, resulting in electrical connection therebetween; and a third step of performing at least one of a film formation process, an etching process, a patterning process, and a washing process for the second surface of the semiconductor chip. <IMAGE>
申请公布号 EP0881671(A3) 申请公布日期 1999.06.30
申请号 EP19980109536 申请日期 1998.05.26
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 CHINO, TOYOJI;YOSHIDA, TAKAYUKI;MATSUDA, KENICHI
分类号 H01L21/56;H01L21/60;H01L21/68;H01S5/00;H01S5/02;H01S5/042;H01S5/183;H01S5/42 主分类号 H01L21/56
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