发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device, in which a semiconductor chip having a first surface and a second surface substantially parallel to each other is mounted on a submount such that the first surface faces the submount, includes: a first step of applying resin to at least one of the semiconductor chip and the submount; a second step of applying a pressure to the semiconductor chip and the submount so that the semiconductor chip and the submount are bonded to each other by the resin, resulting in electrical connection therebetween; and a third step of performing at least one of a film formation process, an etching process, a patterning process, and a washing process for the second surface of the semiconductor chip. <IMAGE> |
申请公布号 |
EP0881671(A3) |
申请公布日期 |
1999.06.30 |
申请号 |
EP19980109536 |
申请日期 |
1998.05.26 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
CHINO, TOYOJI;YOSHIDA, TAKAYUKI;MATSUDA, KENICHI |
分类号 |
H01L21/56;H01L21/60;H01L21/68;H01S5/00;H01S5/02;H01S5/042;H01S5/183;H01S5/42 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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