| 摘要 |
<p>A light emitting device Ä10, 15, 50, 130Ü is constructed on a substrate Ä2, 132Ü. The device includes an n-type semiconductor layer Ä3Ü in contact with the substrate Ä2, 132Ü, an active layer Ä4Ü for generating light, the active layer Ä4Ü being in electrical contact with the n-type semiconductor layer Ä3Ü. A p-type semiconductor layer Ä5Ü is in electrical contact with the active layer Ä4Ü, and a p-electrode Ä21, 51, 101Ü is in electrical contact with the p-type semiconductor layer Ä5Ü. The p-electrode Ä21, 51, 101Ü includes a layer of silver in contact with the p-type semiconductor layer Ä5Ü. In the preferred embodiment of the present invention, the n-type semiconductor layer Ä3Ü and the p-type semiconductor layer Ä5Ü are constructed from group III nitride semiconductor materials. In one embodiment of the invention the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer Ä52, 102Ü is preferably provided over the silver layer. The fixation layer Ä52, 102Ü may be a dielectric or a conductor, the choice depending on whether or not the silver layer is transparent. <IMAGE></p> |
