Power semiconductor switching device

摘要

A power semiconductor switching device comprises a mounting board (110) on which a reverse bias driving circuit (20) for applying a reverse bias between the control electrode and one of two main electrodes of a GTO element (11) housed in a flat package is contained. The mounting board (110) has a through hole through which the main electrode of the GTO element (11) penetrates so that the flat package is located in the proximity of the through hole and the perimeter of the through hole partially surrounds the flat package, and a conducting member formed on one surface of the mounting board (110) and electrically connected to the control electrode of the GTO element (11).