| 摘要 |
A vertical cavity surface emitting laser is constructed on a semiconductor substrate, and includes a second mirror stack disposed on the substrate, a gain region with an active material within the second mirror stack capable of emitting electromagnetic radiation at a fundamental wavelength, a non-linear element disposed above the second mirror stack capable of emitting electromagnetic radiation at a harmonic of the fundamental wavelength in response to the electromagnetic radiation at the fundamental wavelength, and a first mirror stack disposed above the non-linear element. Electrodes are applied to the second mirror stack and the substrate for electrically pumping current into the gain region without passing through the non-linear element. A conducting layer can be disposed in the second mirror stack and an annular current confinement region can be formed in the second mirror stack around the gain region to help guide current into the active material. The gain region within the second mirror stack and the non-linear element are separated by a preselected distance. The first mirror stack is organized to be reflective of electromagnetic radiation at the fundamental wavelength and partially transmissive of electromagnetic radiation at the harmonic of the fundamental wavelength.
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