| 摘要 |
PROBLEM TO BE SOLVED: To obtain a ZnO-base sintered compact for a high productivity low- cost sputtering target hardly causing an abnormal electric discharge in DC sputtering over a long period of time and capable of efficiently forming a transparent electrically conductive film excellent in characteristics. SOLUTION: The ZnO-base sintered compact contains 0.5-13 at.% B and 0.3-3 at.%, one or more 3rd elements selected from the group consisting of Al, Ga, In, Ge, Si, Sn and Ti, substantially comprises a multiple oxide of zinc, boron and the 3rd elements and has >=4.8 g/cm<3> sintered density and 4-15μm average grain diameter.
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